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| ? TIP29/TIP29a/TIP29b/TIP29c pb free plating product TIP29/TIP29a/TIP29b/TIP29c pb 1.0 ampere npn type epitaxial silicon power transistors 9.19 0.20 3.60 0.20 9.90 0.20 2.80 0.20 15.70 0.20 13.08 0.20 3.02 0.20 2.54typ 6.50 0.20 0.80 0.20 1.27 0.20 1.52 0.20 1.30 0.20 4.50 0.20 0.50 0.20 2.40 0.20 2.54typ dimensions in millimeters package dimension to-220c 1. base 2. collector 3. emitter 1 2 3 ? 2006 thinki semiconductor co., ltd. http://www.thinkisemi.com/ page 1/3 rev.05 description moisure sensitivity level 1 complementary to type tip30 series r th(jc) is 4.167 o c/w, r th(ja) is 62.5 o c/w base 1 collector 2 3 emitter maximum ratings symbol rating rating unit v ceo collector- emitter voltage v cbo collector- base voltage TIP29, tip30 TIP29a, tip30a TIP29b, tip30b TIP29c, tip30c 40 60 80 100 v v eb emitter- base voltage 5.0 v i c collector current- continuous peak (1) 1.0 3.0 a i b base current- continuous 0.4 a p d total power dissipation @t c =25 o c derate above 25 o c 30 0.24 w w/ o c t j , junction temperature -55 to +150 o c t stg storage temperature -55 to +150 o c 2. pulse test: pulse width= 3 00us, duty cycle <2.0% 3. f t = | h f e | x f test notes:1. high temperature solder exemption applied, see eu directive annex 7. i t i s in t e n t e d f o r u s e i n p ow e r a m p l i f ie r a n d s w i t c h i n g a pp li c a t i on.
? TIP29/TIP29a/TIP29b/TIP29c ? 2006 thinki semiconductor co., ltd. http://www.thinkisemi.com/ page 2/3 rev.05 electrical characteristics @ 25 o c unless otherwise specified symbol parameter min max units off characteristics v ceo(sus) collecto r - emitter sustaining voltage ( note 2 ) (i c =30madc, i b =0) TIP29, tip30 TIP29a, tip30a TIP29b, tip30b TIP29c, tip30c 40 60 80 100 --- --- --- --- vdc i ebo emitter- base cutoff current (v eb =5.0vdc, i c =0) - - - 1.0 madc i ces collector cutoff current (v ce =40v, v eb =0) TIP29, tip30 (v ce =60v,v eb =0) TIP29 a, tip30a (v ce =80v,v eb =0) TIP29 b, tip30b (v ce =100v, v eb =0) TIP29 c, tip30c --- --- --- --- 200 200 200 200 uadc i ceo collector cutoff current (v ce =30vdc, i b =0) TIP29, TIP29a, tip30, tip30a (v ce =60vdc, i b =0) TIP29b, TIP29c, tip30b, tip30c --- --- 0.3 0.3 madc on characteristics (2) h fe(1) dc current gain (i c =0.2adc, v ce =4.0vdc) (i c =1.0adc, v ce =4.0vdc) 40 15 --- 75 ---- v ce(sat) collector- emitter saturation voltage (i c =1.0adc, i b =125madc) --- 0.7 vdc v be(on) base-emitter on voltage (i c =1.0adc,v ce =4.0adc) --- 1.3 vdc f t curren t - gain - bandwidth produc t ( note 3 ) (i c =200m adc, v ce =10vdc, f=1.0mh z ) 3.0 --- mh z h fe small- signal current gain (i c =0.2adc, v ce =10vdc, f=1.0khz ) 20 --- --- ? TIP29/TIP29a/TIP29b/TIP29c ? 2006 thinki semiconductor co., ltd. http://www.thinkisemi.com/ page 3/3 rev.05 figure 1. dc current gain ! "#$ figure 2. turn?off time % % & % ! $ ! $ &'! ( ! $ figure 3 . turn?on time & % ! ) * ! "#$ ! + * %,(( ! ) * ! ( * ! ( * figure 4 . active region safe operating area - - % ./ 0 1 * %/ - 2 2 3 3 3%% 3 - 1% / 4$ +5 4$ ratings and characteristic curves TIP29 series |
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